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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningfagfællebedømt

  • S.E. Andresen
  • B.S. Sørensen
  • Lindelof, Poul Erik
  • J. Sadowski
  • C.M. Guertler
  • J.A.C. Bland
  • Finn Berg Rasmussen
Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.
OriginalsprogEngelsk
TidsskriftJournal of Applied Physics
Vol/bind94
Udgave nummer6
Sider (fra-til)3990-3994
Antal sider5
ISSN0021-8979
DOI
StatusUdgivet - 15 sep. 2003

ID: 113616