Forskning ved Københavns Universitet - Københavns Universitet

Forside

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Research output: Contribution to journalJournal articleResearchpeer-review

  • J. G. Gluschke
  • J. Seidl
  • A. M. Burke
  • R. W. Lyttleton
  • Carrad, Damon James
  • A. R. Ullah
  • S. Fahlvik
  • S. Lehmann
  • H. Linke
  • A. P. Micolich
Original languageEnglish
Article number064001
JournalNanotechnology
Volume30
Issue number6
Number of pages8
ISSN0957-4484
DOIs
Publication statusPublished - 8 Feb 2019

Bibliographical note

[Qdev]

    Research areas

  • nanowire, gate-all-around, GAA, field-effect transistor, nanowire alignment

ID: 216157829